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I have saved the best for last. Probably the coolest thing I have seen when it comes to IO is the FileSystemWatcher class. As its name implies, this class will watch the file system for you and raise events when changes are made to directories or files. About a year ago, I spent a couple thousand dollars on a single-threaded application that kept track of files that were added to a directory on an NT4 system. It was painfully slow and locked the computer every time it "synced" directories based on changes made. The same feat can now be accomplished in a multithreaded, super fast way with the FileSystemWatcher class. Event watching File system events are raised when events occur in the file system. The whole concept of Windows is that it reacts to messages, or events, that are fired directly by the user or indirectly by applications that may be running. These messages are essentially events; they could be a user clicking a button on a form, clicking the Start menu, copying a file, or creating a directory. In previous versions of VB, it was very difficult to listen for system events to occur because VB has always been a single threaded application. This is not the case anymore. In VB .NET, you have the capability to watch for any type of event that occurs in the operating system, in a multithreaded way. Table 10-16 lists the events that the FileSystemWatcher will track. Table 10-16: File System Events Event Created Raised When Directory or file is created. Directory or file is deleted. Directory name or file name is changed . Changes are made to the size, system attribute s, last write time, last access time, or

Font: This option allows you to select the default font (Monospace 10) or a custom-

Trap2(0) = New PointF(0, 0) Trap2(1) = New PointF(50, 40) Trap2(2) = New PointF(100, 123.2) Trap2(3) = New PointF(100, 173.2) Trap2(4) = New PointF(0, 0)

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Define an estimator T by the property that it minimizes an expression of the form (11.4) Here, p is a given symmetric function with a unique minimum at 0, S is the MAD (median absolute deviation from the median), and c is a so-called tuning constant. If p is convex and its derivative 1c, = p is bounded, then T has breakdown point 0.5; see Section 3 . 2 . For nonconvex p ( redescending estimates ), the situation is more complicated. Assume that p increases monotonely toward both sides. If p is unbounded, and if some weak additional regularity conditions are satisfied, the breakdown point still is 0.5. If p is bounded, the breakdown point is strictly less than 0.5, and it depends not only on the shape of 11, and the tuning constant c, but also on the sample configuration. See Huber (1984) for details and explicit determination of the breakdown points.

In a thick-film SOI device (Fig 55b), the silicon film thickness is larger than twice the value of Xdmax In such a case, there is no interaction between the depletion zones arising from the front and the back interfaces, and there exists a piece of neutral silicon beneath the front depletion zone Such a device is called partially depleted (PD) If this neutral piece of silicon, called "body," is connected to ground by a "body contact" or "body tie," the characteristics of the device will be exactly those of a bulk device.

If, however, the body is left electrically floating, the device will basically behave as a bulk device, but with the notable exception of two parasitic effects-the first one is called the "kink effect" (a kink appears in the output characteristics of the device), and the second one is the presence of a parasitic, openbase, bipolar transistor between the source and the drain In a thin-film SOI device (Fig 55c), Ihe silicon film thickness is smaller than Xdmax In this case, the silicon film is fully depleted at threshold, irrespective of the bias applied to the back gate (with the exception of the possible presence of thin accumulation or inversion layers at the back interface, if a large negative or positive bias is applied to the back gate, respective ely) Such a device is called fully depleted (FD).

Fully depleted SOI devices are virtually free of the kink effect, if their back interface is not in accumulation Among all types of SOI devices, fully depleted devices with depleted back interface exhibit the most attractive properties, such as low electric fields, high transconductanc e, excellent short-channel behavior, and a near-ideal subthreshold slope In a thin SOI film it is also possible to realize accumulation-mode (AM) MOSFETs If the workfunction of the giite material is properly chosen (eg, N+ polysilicon for a p-channel device with P+ source and drain and P-type channel doping; Fig 55d), the device is fully depleted in the OFF state, and no current flows between source and drain When a gate voltage is applied to turn the device on, a quasineutral zone appears in the body of i:he silicon film, and a current, called "body current," starts to flow.