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WordPress comes with an object cache built in. An object cache is an application level cache that stores sets of data, or objects of data such as a list of posts or links. There is no need to install or do anything specific to make this cache work. Plugin authors can utilize this object cache when developing plugins that retrieve data often from the database. The key components of any cache is a mechanism to add a new set of data, delete the data, flush the whole cache (immediately expiring all cached data so it has to be re-generated), and retrieve the data. Some caching mechanisms, including the WordPress object cache, have a mechanism to replace an existing set of data, while other caching mechanisms replace data by expiring an old set and creating a new set with a new serial number. The WordPress object cache has five functions (and a class if you so choose, but the functions just wrap around the related class methods) for all of these actions. Plugin developers should use these caching functions to ensure that the plugin plays nice with the rest of the system. Many of WordPress own API functions have this object caching built in, and you don t need to do anything special to take advantage of it.

hand, there are initiatives extracting the information in a content-driven (bottom up) manner. Goal-driven systems, for example, SMES (Declerck and Neumann, 2000), are generally domain speci c and make use of knowledge about the domain in question. The information of interest typically is prede ned as open slots, in so-called templates, which are to be lled by the relevant parts of the text. Goal-driven systems often make use of shallow parsing techniques, and this has led to a renaissance of nite state techniques, for example, augmented transition networks or nite state transducers. Content-driven systems, on the other hand, are designed to work more or less domain-independently. Typically, content-driven systems build up ontologies/taxonomies based on heuristics as well as statistical techniques. Goal-driven and content-driven systems have in common that both of them are highly dependent on a thorough low-level linguistic analysis of a given text, comprising normalization, tokenization and part-of-speech (POS) tagging. As of today, many goal-driven systems perform reasonably well within their domains (for evaluation methods, see, e.g. the MUC conferences). However, their dependency on prede ned domains is a clear drawback and makes them rather unattractive in the Semantic Web context, or for agents or other domain-independent applications. This drawback has led to initiatives that are either trying to make goal-driven systems more domain-adaptive (e.g. SMES; Declerck and Neumann, 2000), or combining them with content driven techniques (e.g. GETESS; Dusterhoft et al., 1999). On the other hand, the domain-independence of content-driven systems comes with a de ciency in terms of performance. The lack of accuracy makes content-driven systems somewhat inappropriate as tools for extracting information units that require a high degree of precision (e.g. knowledge base generation). However, their fuzziness is an important feature when it comes to tasks dealing with uncategorized texts such as summarization or agent-based searching.

Gate Voltage Vg (V) Figure 6.25 Hot-carrier degradation as a function of gate voltage. The different curve represent the different gate oxide splits. The nitrided oxides (NO) and reoxidized nitrided oxide (ONO) greatly reduce the peak of the hot-carrier damage. (After Hori et al., Ref. 120, 1992 IEEE.) metal pad. The pad, covered with resist, is in contact with the unprotected deposited metal until the exposed metal has been completely etched. No charge builds up on the pad until this point. Once the unprotected metal is completely removed, the charge begins to build up on the exposed metal sides at the edge of the resist mask. 94 The longer the overetch, the greater the buildup of charge. 92 The damage itself takes the form of interface states, slow interface states, 9 8 and positive hole traps. 92 This damage appears not be annealed out-interface states reappear after an alloy anneal, 99 and the hole traps remain, even after anneals as high as 9000C.100 Plasma damage has a significant effect on the hot-carrier hardness of the oxide.99 ,101 This added susceptibility comes from the prestressing of the gate oxide by Fowler-Nordheim injection that arises during the plasma processing. Initial measurements appeared to show that n-MOS transistors were affected by antenna ratios. However, later work99 showed that the n-MOS was much less susceptible to interface state generation but that it had increased electron trapping (at Vg = Vd). More striking was the decrease in p-MOS hot-carrier susceptibility. 98 The p-channel device shows a very marked increase in damage under electron trapping conditions (Vg just above threshold). In summary, the damage in both n- and p-MOS under hot-carrier stress for unprotected device with large antenna ratios takes the form of increased electron trapping susceptibility.

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